Magnetic Electronic Materials and Devices Laboratory

Magnetoresistance effect means the change of the resistance under the external magnetic field, which involves Ordinary Magnetoresiatance (OMR), Anisotropic Magnetoresiatance (AMR), Giant Magnetoresiatance (GMR), Tunneling Magnetoresiatance (TMR),Colossal Magnetoresiatance (CMR), Ballistic Magnetoresiatance (BMR), Ballistic Anisotropic Magnetoresiatance (BAMR),Tunneling Anisotropic Magnetoresiatance (TAMR),and Colossal Anisotropic Magnetoresistance (CAMR) in Perovskite Manganite.Multiferroics materials,which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices.

The coexistence of several order parameters and the strong coupling between ferroelecity and ferromagnetism will bring out some novel physical phenomena, such as electrical field-control-ferromagnetism and ferromagnetic field-control-ferroelectricity. The magnetoresistance materials and multiferroic materials have a widely applications in magnetic sensors. Our research focus on the exploration of new type magnetoresistance and multiferroic materials and their physical mechanisms using the advanced preparation and micro/nano processing technology and try to realize high sensitivity, high stability, high integrated, low cost and new type magnetic sensors, read-head and other magnetic devices.