Magnetic Electronic Materials and Devices Laboratory

Reversible resistance variation can be tuned by applying pulsed voltage at room temperature in Metal/Pr0.7Ca0.3MnO3/Metal sandwich structure in 2000. Similar resistance switching phenomena have also been reported in a wide variety of binary transition metal oxides such as NiO, ZnO, CuO, ZrO2, and TiO2. A renewed nonvolatile memory concept called resistance-switching random access memory (RRAM), which is based on resistance change modulated by electrical stimulus, has recently inspired scientific and commercial interests due to its high operation speed, high scalability, and multibit storage potential. Our current research focuses on the novel RRAM materials, resistance switching mechanism, and RRAM device structures.