Gao Shuang
Date: 2018-06-22， Hits: 1103

Shuang Gao, Ph.D, Associate Professor

E-mail: gaoshuang@nimte.ac.cn

 

Main resume

  • 2007.09~2011.06, University of Science and Technology Beijing, School of Materials Technology and Engineering, Bachelor
  • 2011.09~2016.06, Tsinghua University, School of Materials Technology and Engineering, Ph.D
  • 2016.07~2018.12, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Research Fellow
  • 2018.12~Now, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Associate Professor

 

Research interests：

Performance Modulation of Resistive Random Access Memory; Flexible Resistive Switching Materials and Devices; Memristive Materials and Devices for Neuromorphic Computing

 

 

Selected papers：

  1. Wuhong Xue,# Yi Li,# Gang Liu*, Zhuorui Wang, Wen Xiao, Kemin Jiang, Zhicheng Zhong, Shuang Gao*, Jun Ding, Xiangshui Miao, Xiao-Hong Xu*, Run-Wei Li*, Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor. Adv. Electron. Mater. 2020, 6(2), 1901055.
  2. Shuang Gao, Gang Liu*, Huali Yang, Chao Hu, Qilai Chen, Guodong Gong, Wuhong Xue, Xiaohui Yi, Jie Shang, Run-Wei Li*, An Oxide Schottky Junction Artificial Optoelectronic Synapse. ACS Nano 2019, 13(2), 2634-2642. (IF: 13.903)
  3. Shuang Gao, Xiaohui Yi, Jie Shang, Gang Liu*, Run-Wei Li*, Organic and hybrid resistive switching materials and devices. Chemical Society Reviews 2019, 48(6), 1531-1565. (IF: 40.443)
  4. Wuhong Xue#, Shuang Gao#, Jie Shang, Xiaohui Yi, Gang Liu, Run-Wei Li*, Recent Advances of Quantum Conductance in Memristors. Advanced Electronic Materials 2019, 1800854. (Co-First Author)
  5. Shuang Gao, Gang Liu*, Qilai Chen, Wuhong Xue, Huali Yang, Jie Shang, Bin Chen, Fei Zeng, Cheng Song, Feng Pan*, Run-Wei Li*, Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application. ACS Applied Materials & Interfaces 2018, 10(7): 6453-6462.
  6. Shuang Gao, Guang Yang, Bin Cui, Shouguo Wang, Fei Zeng, Cheng Song, Feng Pan*, Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell. Nanoscale 2016, 8(25): 12819-12825.
  7. Shuang Gao, Fei Zeng*, Minjuan Wang, Guangyue Wang, Cheng Song, Feng Pan*, Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch. Scientific Reports 2015, 5: 15467.
  8. Shuang Gao, Fei Zeng*, Minjuan Wang, Guangyue Wang, Cheng Song, Feng Pan*, Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system. Physical Chemistry Chemical Physics 2015, 17(19): 12849-12856.
  9. Shuang Gao, Fei Zeng*, Fan Li, Minjuan Wang, Haijun Mao, Guangyue Wang, Cheng Song, Feng Pan*, Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale 2015, 7(14): 6031-6038.
  10. S. Gao, C. Chen, Z. Zhai, H. Y. Liu, Y. S. Lin, S. Z. Li, S. H. Lu, G. Y. Wang, C. Song, F. Zeng*, F. Pan*, Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories. Applied Physics Letters 2014, 105(6): 063504.
  11. F. Pan*, S. Gao, C. Chen, C. Song, F. Zeng, Recent progress in resistive random access memories: materials, switching mechanisms, and performance, Materials Science and Engineering: R: Reports 2014, 83: 1-59. (IF: 22.25; Citations: 674)
  12. Shuang Gao, Fei Zeng*, Chao Chen, Guangsheng Tang, Yisong Lin, Zifeng Zheng, Cheng Song, Feng Pan*, Conductance quantization in a Ag filament-based polymer resistive memory. Nanotechnology 2013, 24(33): 335201.
  13. S. Gao, C. Song*, C. Chen, F. Zeng, F. Pan*, Formation process of conducting filament in planar organic resistive memory, Applied Physics Letters 2013, 102(14): 141606.
  14. Shuang Gao, Cheng Song*, Chao Chen, Fei Zeng, Feng Pan*, Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices, The Journal of Physical Chemistry C 2012, 116(33): 17955-17959. (Citations: 137)

 

Book chapters：

  1. Shuang Gao, Xiaohui Yi, Jie Shang, Bin Chen, Gang Liu*, Run-Wei Li*, Flexible Resistive Switching Memories: From Materials to Devices (Chapter 4), in “Advances in Materials Science Research”, Volume: 34, Editor: Maryann C. Wythers, Pages: 157-186, Nova Science Publishers, New York, 2018.
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