Hu Benlin
Date: 2009-03-16， Hits: 756

Benlin Hu

Email: hubenlin@nimte.ac.cn

 

Education Background

  • 2002.09-2006.07 B. Eng., Harbin University of Science and Technology, Chemical Engineering and Technology. Supervisor: Prof. Bo Liu
  • 2006.09-2013.01 Ph.D. degree, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Polymer Chemistry and Physics. Supervisor: Prof. Run-Wei Li and Prof. Qing Yan

Academic Research Experience

  • 2013.05-2015.05, Research Fellow, Nanyang Technological University. Advisor: Prof. Qichun Zhang.
  • 2015.09-2019.10 Humboldt Postdoctoral Research Fellow and postdoctoral researcher, Max Planck Institute for Polymer Research. Advisor: Prof. Dr. Martin Baumgarten

Honors and Awards

  • Science and Technology Progress Awards in Ningbo City (1st Class), 2017
  • Humboldt Research Fellowship for Postdoctoral Researchers, 2015
  • Chinese Academy of Sciences Presidential Scholarship (Excellent student prize, top 1/300), 2013

Research Interesting:

Intrinsically stretchable materials, including electrodes, semiconductors; intrinsically stretchable devices, including OFTTs and sensors.

Publications in peer-reviewed scientific journals

1. Hu, B.-L. et al, Complementary Packing by Complementary Structure in N-doping Graphene Nanoribbons. To be submitted. (Nano pores and high surface areas formed by the complementary packing in 3D graphene nanoribbons).

2. Hu, B.-L.; Baumgarten, M. Thiadiazoloquinoxalines. Synlett, accepted. (invited review)

3. Hu, B.-L.; An, C.; Wagner, M.; Ivanova, G.; Ivanova, A.; Baumgarten, M. Three-dimensional Pyrene-fused N-Heteroacenes. Journal of the American Chemical Society, revised. (The first report on 3D graphene nanoribbons with a size more than 10 nm).

4. Hu, B.-L.; Zhang, K.; An, C.; Schollmeyer. D.; Pisula, W.; Baumgarten. M. Layered Thiadiazoloquinoxaline Containing Long Pyrene-fused N-Heteroacenes. Angewandte Chemie International Edition 2018, 57, 12375-12379. (The first report about layered stacking structure in long N-heteroacenes).

5. Hu, B.-L.; Zhang, K.; An, C.; Pisula, W.; Baumgarten, M. Thiadiazoloquinoxaline-Fused Naphthalenediimides for n-Type Organic Field-Effect Transistors (OFETs). Organic Letters, 2017, 19, 6300-6303. 4 cited.

6. Hu, B.; Wang, C.; Zhang, J.; Qian, K.; Lee, P. S.; Zhang, Q. Organic memory effect from donor-acceptor polymers based on 7-perfluorophenyl-6H-[1,2,5]-thiadiazole[3,4-g]benzoimidazole. RSC Advances, 2015, 5, 77122-77129. 8 cited.

7. Hu, B.; Li, M.; Chen, W.; Wan, L.; Chen, Y.; Zhang, Q. Novel donor-acceptor polymers based on 7-perfluorophenyl-6H-[1,2,5]thiadiazole[3,4- g]-benzoimidazole for bulk heterojunction solar cells. RSC Advances, 2015, 5, 50137-50145. 21 cited.

8. Hu, B.; Wang, C.; Zhang, J.; Qian, K.; Chen, W.; Lee, P. S.; Zhang, Q. Water-soluble conjugated polymers as active elements for organic nonvolatile memories. RSC Advances, 2015, 5, 30542-30548. 9 cited.

9. Hu, B.; Wang, C.; Wang, J.; Gao, J.; Wang, K.; Wu J.; Zhang, G.; Chen, W.; Venkateswarlu, B.; Wang, M.; Lee, P. S.; Zhang, Q. Inorganic-Organic Hybrid Polymer with Multiple Redox for High-Density Data Storage. Chemical Science, 2014, 5, 3404-3408. (The first report on multilevel switching based on the redox of polyoxometalate)  82 cited.

10. Pan, L.;‡ Hu, B.;‡ Zhu, X; Chen, X.; Shang, J.; Tan, H.; Xue, W.; Zhu, Y.; Liu, G.; Li, R.-W.; Role of Oxadiazole Moiety in Different D–A Polyazothines and Related Resistive Switching Properties. Journal of Materials Chemistry C, 2013, 1, 4556-4564. (‡ Liang Pan and Benlin Hu contributed equally) 20 cited.

11. Hu, B.; Zhu, X.; Chen, X.; Pan L.; Peng, S.; Wu, Y.; Shang, J.; Liu, G.; Yan, Q.; Li, R.-W. A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching. Journal of the American Chemical Society, 2012, 134, 17408-17411 (the first example using proton-doping in conjugated polymers to tune the memory performance) 86 cited.

12. Hu, B.; Quhe, R.; Chen, C.; Zhuge, F.; Zhu, X.; Peng, S.; Chen, X.; Pan, L.; Wu, Y.; Zheng, W.; Yan, Q.; Lu, J.; Li, R.–W.. Electrically Controlled Electron Transfer and Resistance Switching in Reduced Graphene Oxide Noncovalently Functionalized with Thionine. Journal of Materials Chemistry, 2012, 22, 16422-16430. 27 cited.

13. Hu, B.; Zhuge, F.; Zhu, X.; Peng, S.; Chen, X.; Pan, L.; Yan, Q.; Li, R.-W. Nonvolatile Bistable Resistive Switching in a new Polyimide bearing 9-Phenyl-9H-carbazole Pendant. Journal of Materials Chemistry, 2012, 22, 520-526. 59 cited.

14. Hu, B.; Wei, H.; Han, Y.; Zhu, G.; Pei, X.; Zhu, J.; Fang, X. Low Dielectric Constant and Organosolubility of Polyimides derived from Unsymmetric Phthalic-thioether-naphthalic Dianhydrides. Journal of Materials Science, 2011, 46, 1512-1522. 10 cited.

15. An, C.; Makowska, H.; Hu, B.; Duan, R.; Pisula, W.; Marszalek, T.; Baumgarten, M. Effect of fluorination of naphthalene diimide–benzothiadiazole copolymers on ambipolar behavior in field-effect transistors. RSC Advances, 2018, 8, 16464.

16. Sun, S.; Zhou, Y.; Hu, B.; Zhang, Q.; Xu, Z. Ethylene Glycol and Ethanol Oxidation on Spinel Ni-Co Oxides in Alkaline. Journal of the Electrochemical Society, 2016, 163, H99-H104.

17. Wang, C.; Zamashita, M.; Hu, B.; Zhou, Y.; Wang, J.; Wu, J.; Huo, F.; Lee, P. S.; Aratani, N.; Yamada, H.; Zhang, Q. Synthesis, Characterization, and Memory Performance of Two Phenazine/Triphenylamine-Based Organic Small Molecules through Donor-Acceptor Design. Asian Journal of Organic Chemistry, 2015, 4, 646-651

18. Wang, C.; Hu, B.; Wang, J.; Gao, J.; Li, G.; Xiong, W.; Zou, B.; Suzuki, M.; Aratani, N.; Zamada, H.; Huo, F.; Lee, P. S.; Zhang, Q. Rewritable Multilevel Memory Performance of a Tetraazatetracene Donor-Acceptor Derivative with Good Endurance. Chemistry - An Asian Journal, 2015, 10, 116-119.

19. Wang, C.; Gu, P.; Hu, B.; Zhang, Q. Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements. Journal of Materials Chemistry C, 2015, 3, 10055-10065,

20. Yang, Z.; Zhan, Q.; Zhu, X.; Liu, Y.; Yang, H.; Hu, B.; Shang, J.; Pan, L.; Chen, B.; Li, R.-W. Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures. EPL, 2014, 108, article no. 58004.

21. Shang, J.; Liu, G.; Yang, H.; Zhu, X.; Chen, X.; Tan, H.; Hu, B.,; Pan, L.; Xue, W.; Li, R.-W. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures. Advanced Functional Materials, 2014, 24, 2171-2179.

22. Wang, C.; Wang, J.; Li, P.; Gao, J.; Tan, S. Y.; Xiong, W.; Hu, B.; Lee, P. S.; Zhao, Y.; Zhang, Q. Synthesis, Characterization, Non-volatile Memory Device Application of A Novel N-Substituted Heteroacene. Chemistry - An Asian Journal, 2014, 9, 779-783.

23. Zhu, X.; Ong, C. S.; Xu, X.; Hu, B.; Shang, J.; Yang, H.; Katlakunta, S.; Liu, Y.; Chen, X.; Pan, L.; Ding, J.; Li, R.-W. Direct observation of lithium-ion transport under an electrical field in LixCoO2 nanograins. Scientific Reports, 2013, 3, 1084.

24. Zhu, X.; Su, W.; Liu, Y.; Hu, B.; Pan, L.; Lu, W.; Zhang, J.; Li, R.-W. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory. Advanced Materials, 2012, 24, 3491-3496.

25. Peng, S.; Zhuge, F.; Chen, X.; Zhu, X.; Hu, B.; Pan, L.; Chen, B.; Li, R.-W. Mechanism for Resistive Switching in an Oxide-based Electrochemical Metallization Memory. Applied Physics Letters, 2012, 100, 072101.

26. Zhuge, F.; Hu, B.; He, C.; Zhou, X.; Liu, Z.; Li, R.-W. Mechanism of Nonvolatile Resistive Switching in Graphene Oxide Thin Films. Carbon, 2011, 49, 3796–3802.

27. Wei, H.; Wu, X.; Hu, B.; Fang, X. Preparation, Characterization, and Properties of Poly(thioether ether ketone imide)s from Isomeric Bis(chlorophthalimide)s. Polymers for Advanced Technologies, 2011, 22, 2488-2495.

28. Wei, H.; Fang, X.; Han, Y.; Hu, B.; Yan, Q. Synthesis and Characterization of Poly(thioether ether sulfone imide)s Derived from Isomeric Bis(chlorophthalimide)s and Bis(4-mercaptophenyl)sulfone. European Polymer Journal, 2010, 46, 246-253.

 

Conferences

1. Hu, B.; Baumgarten, M. The synthesis, stacking and charge transport of N-doped nanoribbons. 10th ECNP International Conference on Nanostructured Polymers and Nanocomposites, San Sebastian, 2018, Spain.

2. Hu, B.; Baumgarten, M. strong acceptors of Thiadiazoloquinoxaline- Containing Long N-heteroacenes). 14th European Conference on Molecular Electronics, Drensden, 2017, Germany.

3. Hu, B.; Baumgarten, M.  Benzothiadiazole-fused Naphthalenediimides for High Performance  OFETs (Poster). KOPO 2017, Bonn, Germany.

4. Hu, B.; Baumgarten, M. Novel Benzothiadiazole fused Naphthalenediimides for High Performance OFETs (oral presentation).E-MRS spring meeting, 2017, Strassbourg, France

5. Hu, B.; Liu, G.; Li, R.-W. A multilevel memory based on proton doped polyazomethine with an excellent uniformity in resistive switching (Poster). Chinese Physical Society, 2012 Annual, Guangzhou, China.

6. Hu, B.; Zhuge, F.; Li R.-W. Non-Covalent Functionalized Graphene Oxide with Dye: Electric Communication with Electric Controllability and Its Application in Memory Device (Poster). Chinese Physical Society, 2011 Annual, Hangzhou, China.

7. Hu, B.; Zhuge, F.; Li R.-W. Non-Covalent Functionalized Graphene Oxide with Dye: Electric Communication with Electric Controllability and Its Application in Memory Device (Poster). Non-Volatile Memory Technology Symposium (NVMTS), IEEE, 11th Annual, 2011, Shanghai, China.

Granted patents

1. Li, R.-W.; Zhu, X.; Hu, B.; Shang, J. Resistance type random access memory with high stability and preparation method for resistance type random access memory. Chinese Patent CN102810634B.

2. Li, R.-W.; Pan, L.; Han, L.; Hu, B.; Peng, S. Memory unit of resistor type random access memory and preparing method thereof. Chinese Patent, CN102723434B

3. Li, R.-W.; Hu, B.; Pan, L.; Shang, J.  A cell of resistive switching memory devices and its preparation. Chinese Patent, CN102623633B

4. Li, R.-W.; Hu, B.; Zhuge, F.; Pan, L. Memory unit of resistance type random access memory and manufacturing method thereof. Chinese Patent, CN102185103B

5. Li, R.-W.; Hu, B.; Zhuge, F.; Pan, L. A poly(Schiff base) used for resistive memory device. Chinese Patent, CN102219898B.

6. Fang, X.; Hu, B.; Han, Y.; Ma, J.; Yan, Q.; Ding, M. Polythioetherimides and method for producing thereof. European Patent, EP2233512 B1

7. Fang, X.; Zhu, G.; Hu, B.; Yan, Q. Poly(thioether nitrile imide) copolymers and their preparation. Chinese Patent, CN102206343B.

8. Fang, X.; Hu, B.; Yan, Q.; Ding, M. Poly(thioether sulphone imide) terpolymers and their preparation. Chinese Patent, CN101704950B.

9. Fang, X.; Hu, B.; Yan, Q.; Ding, M. Poly(thioether ketone imide) terpolymers and their preparation. Chinese Patent, CN102030903B.

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