2015 Papers
Date: 2015-11-06, Hits: 1004
  1. Ying Yu, Qingfeng Zhan, Jinwu Wei, Jianbo Wang, Guohong Dai, Zhenghu Zuo, Xiaoshan Zhang, Yiwei Liu, Huali Yang, Yao Zhang, Shuhong Xie, Baomin Wang, and Run-Wei Li. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates. Appl. Phys. Lett. 106, 162405 (2015);[PDF]

  2. Xinxin Chen, Xiaojian Zhu, Wen Xiao, Gang Liu, Yuan Ping Feng, Jun Ding, and Run-Wei Li. Nanoscale Magnetization Reversal Caused by Electric Field-Induced Ion Migration and Redistribution in Cobalt Ferrite Thin Films. ACS nano. (2015);[PDF]

  3. Hongwei Tan , Gang Liu , Xiaojian Zhu , Huali Yang , Bin Chen , Xinxin Chen , Jie Shang , Wei D. Lu , Yihong Wu , and Run-Wei Li. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions. Adv. Mater. (2015);[PDF]

  4. Liang Pan , Zhenghui Ji , Xiaohui Yi , Xiaojian Zhu , Xinxin Chen , Jie Shang , Gang Liu , and Run-Wei Li. Metal-Organic Framework Nanofi lm for Mechanically Flexible Information Storage Applications. Adv. Funct. Mater. (2015);[PDF]

  5. Yao Zhang, Qingfeng Zhan, Zhenghu Zuo, Huali Yang, Xiaoshan Zhang, Guohong Dai, Yiwei Liu, Ying Yu,Jun Wang, Baomin Wang, and Run-Wei Li. Magnetization reversal in epitaxial exchange-biased IrMn/FeGa bilayers with anisotropy geometries controlled by oblique deposition. Physical Review B 91, 174411. (2015);[PDF]

  6. T. Shang, Q. F. Zhan, H. L. Yang, Z. H. Zuo, Y. L. Xie, Y. Zhang, L. P. Liu, B. M. Wang, Y. H. Wu, S. Zhang, and Run-Wei Li. Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids. Physical Review B 92, 165114. (2015);[PDF]

  7. Huali Yang, Baomin Wang, Xiaojian Zhu, Xiaojian Zhu, Jie Shang, Bin Chen, and Run-Wei Li.Multi-Fields Modulation of Physical Properties of Oxide Thin Films. CPB.(2015);[PDF]

  8. Zhenghu Zuo, Bin Chen, Baomin Wang, Huali Yang, Qingfeng Zhan, Yiwei Liu, Junling Wang & Run-Wei Li. Strain assisted electrocaloric effect in PbZr0.95Ti0.05O3 films on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate. Scientific Reports 5, Article number:16164.(2015);[PDF]

  9. T. Shang, Q. F. Zhan, L. Ma, H. L. Yang, Z. H. Zuo, Y. L. Xie, H. H. Li, L. P. Liu, B. M. Wang, Y. H. Wu, S. Zhang & Run-Wei Li. Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid. Scientific Reports 5, Article number:17734.(2015);[PDF]
  10. Yao Zhang, Qingfeng Zhan, Zhenghu Zuo, Huali Yang, Xiaoshan Zhang, Ying Yu, Yiwei Liu, Jun Wang, Baomin Wang, and Run-Wei Li. Magnetic Anisotropy and Reversal in Epitaxial FeGa/MgO(001) Films Deposited at Oblique Incidence. IEEE Transactions on Magnetics. 51(11),2300804.(2015);[PDF]

  11. Yiwei Liu, Qingfeng Zhan, Baomin Wang, Huihui Li, Yuanzhao Wu, Bin Chen, Dandan Sun, Sining Mao, and Run-Wei Li. Modulation of Magnetic Anisotropy in Flexible Multiferroic FeGa/PVDF Heterostructures Under Various Strains.IEEE Transactions on Magnetics. 51(11),2300804.(2015);[PDF]

  12. Haifeng Du, Renchao Che, Lingyao Kong, Xuebing Zhao, Chiming Jin, Chao Wang, Jiyong Yang, Wei Ning, Runwei Li, Changqing Jin, Xianhui Chen, Jiadong Zang, Yuheng Zhang, Mingliang Tian. Edge-mediated skyrmion chain and its collective dynamics in a confined geometry. Nature Communications, DOI:10.1038/ ncomms 9504.(2015);[PDF]
  13. Zebing Zeng, Sangsu Lee, Minjung Son, Kotaro Fukuda, Paula Mayorga Burrezo, Xiaojian Zhu, Qingbiao Qi, Run-Wei Li, JuanT. Lopez Navarrete, Jun Ding, Juan Casado,* Masayoshi Nakano,* Dongho Kim,* and Jishan Wu. Push−Pull Type Oligo(N‑annulated perylene)quinodimethanes: Chain Length and Solvent-Dependent Ground States and Physical Properties. J. Am. Chem. Soc. 137 (26), 8572-8583.(2015);[PDF]

  14. Xiao Shen,* Kuibo Yin,* Yevgeniy S. Puzyrev,* Yiwei Liu, Litao Sun,* Run-Wei Li,* and Sokrates T. Pantelides. 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3. Advanced Electronic Materials 1, 1500019. (2015);[PDF]
  15. Gang Liu, Cheng Wang, Wenbin Zhang, Liang Pan, Chaochao Zhang, Xi Yang, Fei Fan, Yu Chen,* and Run-Wei Li. Organic Biomimicking Memristor for Information Storage and Processing Applications. Advanced Electronic Materials DOI: 10.1002/aelm.201500298. (2015);[PDF]