Exploration and mechanism of the material aspects of Ningbo where the resistive material progress
Date: 2012-03-06, Hits: 672

Based Electrochromic resistance effect of resistive random access memory (RRAM) is a great potential for development of new storage technology, with a non-volatile, low power, high density, fast read and write and other advantages. Ongoing stability as well as explore new electric Studies of the mechanism of resistance resistive material is very important, is currently a hot topic.

Chinese Academy of Sciences, Ningbo materials Li Run-Wei earlier research team carried out the research work resistive material exploration and RRAM devices. First in BiFeO3 film [Appl Phys Lett 97,042101 (2010), J Phys D: Appl Phys 44, 415104 (2011)], graphene oxide film [Appl Phys Lett 95,232101... (2009), Carbon 49, 3796 (2011), J. Mater. Chem. 22, 16422 (2012)], ZnO films doped N [Nanotechnology 22, 275204 (2011)], polyimide film [J. Mater. Chem. 22, 520 (2012)], poly [Schiff base film 201,110,060,470.3 applications for invention patents, and other materials 201,110,060,469.0] obtained a stable resistive effect. In the resistive switching mechanism research, in 2011, the study group by comparing the difference between a high-impedance state study of electrical transport properties / ZnO / AZO devices Cu / ZnO / Pt and Cu, confirmed the metal conductive wire from positive to negative growth, off position occurred in the vicinity of the negative [Appl. Phys. Lett. 100, 072101 (2012), the paper is edited elected Appl. Phys. Lett. highlights papers], to understand the mechanism of resistive, precise control of conductive wire off achieve a stable reading and writing process RRAM devices provide an important experimental basis. Should "Frontiers of Materials Science" editor invitation of the study group reviewed papers "Resistive switching effects in oxide sandwiched structures" recently published as the cover article.

(http://www.springerlink.com/openurl.asp?genre=article&id=doi:10.1007/s11706-012-0170-8)

Recently, Li Runwei team Nb superconducting element as the anode, was prepared Nb / ZnO / Pt sandwich structure, by precisely controlling the resistance-switching process, in this structure was first observed at room temperature and low temperature superconducting quantum behavior Conductance conductive yarn. Furthermore, they observed the ITO / ZnO / ITO sandwich structure to a half-integer quantum conductance phenomena, and by controlling and limiting the voltage applied to the precise regulation of conductance states. This finding confirms the atomic scale can be constructed by the method of the applied electric field in a solid medium nano-point contact structure, and to achieve conductance quantization at room temperature. Not only for multi-state storage RRAM device provides a new idea, but also to build the atomic scale artificial nanostructures provides a new approach.

Relevant results published in Materials Science magazine Advanced Materials (Adv. Mater. 24, 3941-3946 (2012)) (http://onlinelibrary.wiley.com/doi/10.1002/adma.201201506/pdf), and was named cover article published within the period (http://onlinelibrary.wiley.com/doi/10.1002/adma.201290176/abstract), the work has applied for two patents (201,110,113,939.5, 201,210,050,252.6). The research work to get 973 sub-project, the National Natural Science Foundation of China, Chinese Academy of Sciences Hundred and other project support.

Conductance behavior of quantum point contact structure diagram film sandwich structures and Nb / ZnO / Pt and ITO / ZnO / ITO films quantum

Regulation of Nb / ZnO / Pt sandwich structure and superconductivity ITO / ZnO / ITO sandwich structure of quantum point contact structure