Magnetic Electronic Materials and Devices Laboratory

Due to the photo-induced electron detrapping, electrode-injection and retrapping processes of the ITO/CeO_2-x/AlO_y/Al structure, electrically-erasable, multilevel and persistent photoresponsive resistances in the broadband visible region, which allow the integration of demodulating, arithmetic and memory functions in the same physical space, have been demonstrated in the present optoelectronic device. Though the challenge of slow speed, which hinders the optoelectronic device from immediate implementation, is still pending, the present finding demonstrates the possibility of using a photoresponsive device for future high-performance information storage, computing and communication applications.