Flexible Magnetic Electronic Functional Materials and Devices Laboratory is a part of the Division of Magnetic Materials and Advanced Devices in NIMTE. Our Laboratory is built basing on Chinese Academy of Sciences Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of magnetic materials and the advanced scientific research platform of NIMTE. There are two research directions: Magnetic Sensitive Materials and Sensors and RRAM Materials and Devices.
The research directions of magnetic sensitive materials and sensors include new magnetoresistance materials, multiferroic materials and their composites. The aim is to design and preparation of new high-sensitivity, high integration micro-and nano-magnetic sensing element. Magnetoresistance effect refers to the phenomenon of change of the resistance of the material under the external magnetic field. Multiferroic material is a new kind of multifunctional materials which can show ferroelectricity, ferromagnetism and ferroelasticity in one material. Multiferroic materials show unique physical effects for the coupling effects among the various ferroic. For example, through the coupling between ferroelectricity and ferromagnetism, one can take advantage of the electric field to control magnetic and the magnetic field to control ferroelectricity. Magnetoresistance and multiferroic materials have broad application prospects in the field of magnetic sensors.
RRAM Materials and Devices is mainly concentrated in the resistance random storage material, exploration mechanism and the device structure. In 2000, researchers in the University of Houston found that the system resistance of the metal/perovskite manganite PrCaMnO/metal sandwich structure was quickly switched back and forth between the high and low state when the electrical pulse was applied between two metal electrodes. Subsequently, it was discovered that there was a similar resistive transition effect in a variety of other binary oxides. Based on this electrically-resistive effect, people have proposed a new type of nonvolatile memory concept - resistor-type random access memory (RRAM). Compared with other memory, RRAM has the main advantage of simple preparation rewritable speed, high-density storage and semiconductor process compatibility.